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Jul
17

Fujitsu to Begin Sample Shipments of GaN Power Device with 150V Breakdown Voltage

Contributes to smaller, more efficient power supply products for use in telecommunications, industrial equipment, automotive, and other applications New Fujitsu GaN power device with 150V breakdown voltage. Langen, Germany, July 17, 2013 – Fujitsu Semiconductor Europe (FSEU) today announced the release of MB51T008A, a silicon substrate-based, gallium-nitride (GaN) power device that features a breakdown voltage … Weiterlesen »